Series-

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FET Type4 N-Channel

FET FeatureStandard

Drain to Source Voltage (Vdss)20V

Current - Continuous Drain (Id) @ 25°C50mA (Ta)

Rds On (Max) @ Id, Vgs70Ohm @ 1mA, 5V

Vgs(th) (Max) @ Id1.5V @ 1µA

Gate Charge (Qg) (Max) @ Vgs-

Input Capacitance (Ciss) (Max) @ Vds-

Power - Max500mW (Ta)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeThrough Hole

Package / Case16-DIP (0.300", 7.62mm)

Supplier Device Package16-DIP